Precursor in the epitaxy of silicon and silicon compounds
A precursor in the epitaxy of silicon and silicon compounds is a chemical used in a process called epitaxy to deposit layers of silicon on substrates.
Epitaxy is a technique involving the growth of thin layers of silicon on a monocrystalline silicon substrate. This method is integral to the production of semiconductors, in particular in the microelectronics industry, where they are essential for the production of integrated circuits.
The most commonly used method of epitaxy is chemical vapour deposition using metalorganic compounds (MOCVD, MOVPE). Gaseous components are introduced under the controlled conditions of a reactor, causing the formation of the desired layers as a result of the reaction. An example of a precursor in this process is silicon trichloride.
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